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| SI7461DP New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 FEATURES ID (A) -14.4 -12.6 rDS(on) (W) 0.0145 @ VGS = -10 V 0.019 @ VGS = -4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives S PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm G 4 D 8 7 D 6 D 5 D G D P-Channel MOSFET Bottom View Ordering Information: SI7461DP-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State -60 "20 Unit V -14.4 -11.5 -60 -4.5 50 125 5.4 3.4 -55 to 150 -8.6 -6.9 A -1.6 mJ 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72567 S-40411--Rev. C, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W C/W 1 SI7461DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V VDS = -60 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -14.4 A VGS = -4.5 V, ID = -12.6 A VDS = -15 V, ID = -14.4 A IS = -4.5 A, VGS = 0 V -40 0.0115 0.015 31 -0.8 -1.2 0.0145 0.019 -1 -3 "100 -1 -10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -4.5 A, di/dt = 100 A/ms VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -10 V, Rg = 6 W VDS = -30 V, VGS = -10 V, ID = -14.4 A 121 20 32 3 20 20 205 90 45 30 30 310 135 70 ns W 190 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 Output Characteristics 60 50 Transfer Characteristics VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 TC = 125_C 10 0 0.0 25_C -55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3V 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72567 S-40411--Rev. C, 15-Mar-04 www.vishay.com 2 SI7461DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.020 Vishay Siliconix On-Resistance vs. Drain Current 8000 7000 Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) VGS = 4.5 V VGS = 10 V 6000 5000 4000 3000 2000 Coss 1000 Crss 0 10 20 30 Ciss 0.012 0.008 0.004 0.000 0 10 20 30 40 50 60 0 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 17 A Gate Charge 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 14.4 A 8 6 4 2 0 0 25 50 75 100 125 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 70 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.03 ID = 14.4 A 0.02 TJ = 150_C 10 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72567 S-40411--Rev. C, 15-Mar-04 www.vishay.com 3 SI7461DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 0.0 -0.2 -0.4 -50 20 ID = 250 mA 80 100 Single Pulse Power, Juncion-To-Ambient Power (W) 60 40 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) 100 rDS(on) Limited 10 I D - Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72567 S-40411--Rev. C, 15-Mar-04 SI7461DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72567 S-40411--Rev. C, 15-Mar-04 www.vishay.com 5 |
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